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2SC5161 - High breakdown voltage.VCEO = 400V NPN silicon transistor

2SC5161_7244981.PDF Datasheet

 
Part No. 2SC5161
Description High breakdown voltage.VCEO = 400V NPN silicon transistor

File Size 176.78K  /  2 Page  

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TY Semiconductor Co., Ltd



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Part: 2SC510
Maker: TOSHIBA
Pack: CAN4
Stock: 77
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 Full text search : High breakdown voltage.VCEO = 400V NPN silicon transistor


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Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 117V(min), 143V(max). For bidirectional use C or CA suffix.
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix.
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 237V(min), 263V(max). For bidirectional use C or CA suffix.
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Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 162V(min), 198V(max). For bidirectional use C or CA suffix.
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